kst3906 ? pnp epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com kst3906 rev. a3 1 september 2010 kst3906 pnp epitaxial silicon transistor features ? general purpose transistor absolute maximum ratings t a = 25c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -5 v i c collector current -200 ma p c collector power dissipation 350 mw t stg storage temperature 150 c symbol parameter test condition min. max. unit bv cbo collector-base breakdown voltage i c = -10 a, i e =0 -40 v bv ceo * collector-emitter breakdown voltage i c = -1.0ma, i b =0 -40 v bv ebo emitter-base breakdown voltage i e = -10 a, i c =0 -5 v i cex collector cut-off current v ce = -30v, v eb = -3v -50 na h fe * dc current gain v ce = -1v, i c = -0.1ma v ce = -1v, i c = -1ma v ce = -1v, i c = -10ma v ce = -1v, i c = -50ma v ce = -1v, i c = -100ma 60 80 100 60 30 300 v ce (sat) * collector-emitter saturation voltage i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma -0.25 -0.4 v v v be (sat) * base-emitter saturation voltage i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma -0.65 -0.85 -0.95 v v f t current gain bandwidth product i c = -10ma, v ce = -20v, f=100mhz 250 mhz c ob output capacitance v cb = -5v, i e =0, f=1.0mhz 4.5 pf nf noise figure i c = -100 a, v ce = -5v r s =1k , f=10hz to 15.7khz 4db t on turn on time v cc = -3v, v be = -0.5v i c = -10ma, i b1 = -1ma 70 ns t off turn off time v cc = -3v, i c = -10ma i b1 =i b2 = -1ma 300 ns 1. base 2. emitter 3. collector sot-23 1 2 3 2a marking
kst3906 ? pnp epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com kst3906 rev. a3 2 typical performance characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. output capacitance figure 4. current gain bandwidth product -1 -10 -100 -1000 1 10 100 1000 v ce = -1v h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 v ce (sat) v be (sat) i c = 10 i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -1 -10 -100 0.1 1 10 100 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage -0.1 -1 -10 -100 10 100 1000 v ce = -20v f t [mhz], current gain bandwidth product i c [ma], collector current
kst3906 ? pnp epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com kst3906 rev. a3 3 physical dimensions 0.96~1.14 0.12 0.03~0.1 0 0.38 re f 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.02 3 0.20 mi n 0.40 0.03 sot-23 dimensions in millimeters
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